"j c7 , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 SD1134-05 rf & microwave transistors vhp portable/mobile applications 175 mhz 7.5 volts common emitter pout = 0.5 w min. with 7.0 db gain description the SD1134-05 is a 7.5 v epitaxial silicon npn planar transistor designed primarily for vhp com- munications. it with stands very high vswr under rated operating conditions. .280 4lsl (m123) epoxy sealed branding 1134-5 pin connection 1. collector 2. emitter 3. base 4. emitter absolute maximum ratings (tease = 25c) symbol vcbo vcer vces vebo ic pdiss tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage device current power dissipation junction temperature storage temperature value 36 16 36 4.0 0.75 5.0 +200 -65 to +150 unit v v v v a w c c thermal data junction-case thermal resistance rth(j-c) 35 c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use, nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
SD1134-05 electrical specifications (tease = 25c) static bvces bvceo bvebo icer icbo hfe ic = 5ma vbe = 0v ic = 25ma ib = oma |e = 1ma ic = oma vce=10v rbe = 80fi vcb=15v ie = oma vce = 5v lc= 100ma min. 36 16 4.0 ? ? 40 value typ. ? ? ? ? ? ? max. ? ? ? 0.5 1.0 200 1 |n;? v v v ma ma ? dynamic pout gp cob f= 150 mhz vcc = 7.5v f= 150 mhz vcc = 7.5v f = 1 mhz vcb = 7.5 v min. 1.4 11.5 ? value typ. ? ? 6.0 max. ? ? _ _ ._. _ 1 init w db pf sgs-thdmsqn microelectronics a b c l e f minimum inches/fin .0/5,59 275/6,99 ,004/0,10 ,050/1,27 ,118/3,00 mftxlmum inches/ mm .230/5,84 1.055/2&.b 85/7,34 .006/0,15 ,060/1,52 ,130/3.30
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